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| POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 PHASE CONTROL THYRISTOR AT403 Repetitive voltage up to Mean on-state current Surge current 1200 V 400 A 5 kA FINAL SPECIFICATION gen 03 - ISSUE : 05 Symbol Characteristic Conditions Tj [C] 125 125 125 Value Unit BLOCKING V V V I I RRM RSM DRM RRM DRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Repetitive peak reverse current Repetitive peak off-state current V=VRRM V=VDRM 1200 1300 1200 30 30 V V V mA mA 125 125 CONDUCTING I I I V V r T (AV) T (AV) TSM Mean on-state current Mean on-state current Surge on-state current I t On-state voltage Threshold voltage On-state slope resistance 180 sin, 50 Hz, Th=55C, double side cooled 180 sin, 50 Hz, Tc=85C, double side cooled sine wave, 10 ms without reverse voltage On-state current = 600 A 25 125 125 125 400 320 5 125 x1E3 1.35 1.0 0.850 A A kA As V V mohm I t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical From 75% VDRM up to 410 A, gate 10V 5ohm Linear ramp up to 70% of VDRM VD=100V, gate source 10V, 10 ohm , tr=.5 s dV/dt = 20 V/s linear up to 75% VDRM di/dt=-20 A/s, I= 270 A VR= 50 V VD=5V, gate open circuit VD=5V, tp=30s 125 125 25 125 25 25 200 500 0.6 200 A/s V/s s s C A 300 700 mA mA GATE V I V V I V P P GT GT GD FGM FGM RGM GM G Gate trigger voltage Gate trigger current Non-trigger gate voltage, min. Peak gate voltage (forward) Peak gate current Peak gate voltage (reverse) Peak gate power dissipation Average gate power dissipation VD=5V VD=5V VD=VDRM 25 25 125 3.5 200 0.25 20 8 5 V mA V V A V W W Pulse width 100 s 75 1 MOUNTING R R T F th(j-h) th(c-h) j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass ORDERING INFORMATION : AT403 S 12 standard specification Junction to heatsink, double side cooled Case to heatsink, double side cooled 95 20 -30 / 125 4.9 / 5.9 55 C/kW C/kW C kN g VDRM&VRRM/100 AT403 PHASE CONTROL THYRISTOR FINAL SPECIFICATION gen 03 - ISSUE : 05 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SQUARE WAVE Th [C] 130 120 110 100 90 30 80 60 70 60 50 0 100 200 90 120 180 DC 300 IF(AV) [A] 400 500 600 PF(AV) [W] 800 700 600 500 400 300 200 100 0 0 100 200 300 IF(AV) [A] 400 500 600 30 60 90 120 180 DC AT403 PHASE CONTROL THYRISTOR FINAL SPECIFICATION gen 03 - ISSUE : 05 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SINE WAVE Th [C] 130 120 110 100 90 30 80 60 70 60 90 120 180 50 0 100 200 300 IF(AV) [A] 400 500 600 PF(AV) [W] 800 700 600 500 400 300 200 100 0 0 100 200 300 IF(AV) [A] 400 500 600 30 60 90 120 180 AT403 PHASE CONTROL THYRISTOR FINAL SPECIFICATION gen 03 - ISSUE : 05 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation ON-STATE CHARACTERISTIC Tj = 125 C 1400 1200 1000 On-state Current [A] 4 ITSM [kA] 800 600 400 200 0 0.6 1.1 1.6 2.1 On-state Voltage [V] 6 SURGE CHARACTERISTIC Tj = 125 C 5 3 2 1 0 1 10 n cycles 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 100.0 90.0 80.0 70.0 Zth j-h [C/kW] 60.0 50.0 40.0 30.0 20.0 10.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. In the interest of product improvement POSEICO S.p.A. reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. |
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